2011CB3019CB922100) and the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China. (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))įund: Project supported by the State Key Program for Basic Research of China (Grant Nos. (Microelectronics: LSI, VLSI, ULSI integrated circuit fabrication technology) Keywords: amorphous indium gallium zinc oxide illumination detrapping effect thin film transistors interface states The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. Abstract The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work.
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